Published January 8, 2010 | Version v1
Journal article

Non-contact electrical detection of intrinsic local charge and internal electric field at nanointerfaces

  • 1. Centre of Computational Physics, Physics Department, University of Coimbra, Rua Larga, 3004-516 Coimbra (Portugal)
  • 2. Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005 (China)

Description

A nanoscale non-contact electrical measurement has been developed based on Auger electron spectroscopy. This approach used the specialty of an Auger electron, which is self-generated and free from external influences, to overcome the technical limitations of conventional measurements. The detection of the intrinsic local charge and internal electric field for nanostructured materials was achieved with a resolution below 10 nm. As an example, the electrical properties at the GaN/AlGaN/GaN nanointerfaces were characterized. The concentration of the intrinsic polarization sheet charges embedded in GaN/AlGaN nanointerfacial layers were accurately detected to be -4.4 e nm-2. The mapping of the internal electric field across the nanointerface revealed the actual energy-band configuration at the early stage of the formation of a two-dimensional electron gas.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/21/1/015707

Additional details

Identifiers

DOI
10.1088/0957-4484/21/1/015707;
PII
S0957-4484(10)34293-0;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
21
Journal Issue
1
Journal Page Range
[6 p.]
ISSN
0957-4484

INIS