Published July 1988 | Version v1
Journal article Metadata-only

Indium transients in the growth of InGaAs by metal-organic chemical vapor deposition

Creators

  • 1. Illinois Univ., Urbana (USA). Dept. of Electrical and Computer Engineering
  • 2. Illinois Univ., Urbana (USA). Materials Research Lab.

Description

A study of indium transients in the growth of InGaAs-AlGaAs and InGaAs-GaAs heterostructures is described for samples grown by atmospheric-pressure metal-organic chemical vapor deposition (MOCVD) using trimethylindium (TMIn) and an interrupted growth process. No evidence of large compositional transients and rapid decays in the indium signal are observed in analysis of secondary ion mass spectrometry (SIMS) and sputtered neutral mass spectrometry (SNMS) data taken at the interfaces of both InGaAs-GaAs strained-layer superlattice structures and InGaAs-AlGaAs laser structures. 24 refs

Additional details

Publishing Information

Journal Title
Materials Letters
Journal Volume
6
Journal Issue
11-12
Series
Mater. Lett.
Journal Page Range
409-412
ISSN
0167-577X
CODEN
MLETD

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
20025249
Subject category
S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
Descriptors DEI
BACKSCATTERING; CESIUM IONS; CHEMICAL VAPOR DEPOSITION; GALLIUM ARSENIDES; INDIUM COMPOUNDS; ION SCATTERING ANALYSIS; LAYERS; MASS SPECTROSCOPY; QUANTITATIVE CHEMICAL ANALYSIS; RUTHERFORD SCATTERING; SEMICONDUCTOR MATERIALS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; CHEMICAL ANALYSIS; CHEMICAL COATING; DEPOSITION; ELASTIC SCATTERING; GALLIUM COMPOUNDS; IONS; MATERIALS; NONDESTRUCTIVE ANALYSIS; SCATTERING; SPECTROSCOPY; SURFACE COATING