Application of forward five point central difference method in the temperature field model of laser processing silicon wafer
- 1. School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin, 541004 (China)
Description
This paper develops an analysis of ultimate capacity of hot-rolled RHS and SHS, Traditional laser processing of silicon wafers usually uses phase transition method to remove materials, resulting in melting material resorting to overheated temperature and forming recast layer after cooling, which will affect the processing quality and material properties. This paper is Based on water jet assisted laser machining and the thought of energy balance, and apply prior to the central five point difference scheme to structure two dimensional transient temperature field model around cutting groove during the process of water jet assisted laser machining. At the same time, it will verify the applicability of the numerical model according to comparing the temperature field and the experimental results. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/1087/2/022002Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 1087
- Journal Issue
- 2
- Journal Page Range
- [7 p.]
- ISSN
- 1742-6596
Conference
- Title
- 1. International Conference on Advanced Algorithms and Control Engineering
- Dates
- 10-12 Aug 2018
- Place
- Pingtung, Taiwan (China)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53023481
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CAPACITY; COOLING; CUTTING; ENERGY BALANCE; JETS; LASER BEAM MACHINING; LASERS; LAYERS; MATERIALS; MELTING; SILICON; TRANSIENTS
- Descriptors DEC
- ELEMENTS; MACHINING; PHASE TRANSFORMATIONS; SEMIMETALS