Published 1992 | Version v1
Book Metadata-only

Electron energy relaxation dynamics in GaAs quantum wells grown on Si: Cool hole effect

Creators

  • 1. City Univ. of New York, NY (United States)
  • 2. City Univ. of New York, Brooklyn, NY (United States)
  • 3. Univ. of Illinois at Urbana, IL (United States). Coordinated Science Lab.

Description

Cool hole effect on hot electron energy relaxation dynamics in GaAs quantum wells grown on Si was investigated using photoreflectance and time-resolved photoluminescence spectroscopies. It was demonstrated that for the quantum wells in which there is a two-dimensional light (heavy) mass hole gas the electron energy relaxation is dominated by electron-hole (electron-longitudinal optical phonon) energy exchange

Part of:
Ultrafast lasers probe phenomena in semiconductors and superconductors

Additional details

Publishing Information

Publisher
SPIE--The International Society for Optical Engineering.
Imprint Place
Bellingham, WA (United States)
ISBN
0-8194-0838-7
Imprint Title
Ultrafast lasers probe phenomena in semiconductors and superconductors
Imprint Pagination
282 p.
Journal Page Range
p. 249-259.

Conference

Title
physics toward device applications.
Acronym
Symposium on advances in semiconductors and superconductors
Dates
23-27 Mar 1992.
Place
Somerset, NJ (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
26004141
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
CHARGE CARRIERS; DYNAMICS; ELECTRONIC STRUCTURE; ENERGY TRANSFER; EXPERIMENTAL DATA; GALLIUM ARSENIDES; PHONONS; SILICON
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; DATA; ELEMENTS; GALLIUM COMPOUNDS; INFORMATION; MECHANICS; NUMERICAL DATA; PNICTIDES; QUASI PARTICLES; SEMIMETALS

Optional Information

Secondary number(s)
CONF-920309--.