Published July 2011 | Version v1
Journal article

On the low-temperature performances of THGEM and THGEM/G-APD multipliers in gaseous and two-phase Xe1

  • 1. Budker Institute of Nuclear Physics, Lavrentiev avenue 11, 630090 Novosibirsk (Russian Federation)
  • 2. Institute for Theoretical and Experimental Physics, Bolshaya Cheremushkinskaya 25, 117218 Moscow (Russian Federation)
  • 3. Weizmann Institute of Science, 76100 Rehovot (Israel)

Description

The performances of THGEM multipliers in two-phase Xe avalanche mode are presented for the first time. Additional results on THGEM operation in gaseous Xe at cryogenic temperatures are provided. Stable operation of a double-THGEM multiplier was demonstrated in two-phase Xe with gains reaching 600. These are compared to existing data, summarized here for two-phase Ar, Kr and Xe avalanche detectors incorporating GEM and THGEM multipliers. The optical readout of THGEMs with Geiger-mode Avalanche Photodiodes (G-APDs) has been investigated in gaseous Xe at cryogenic temperature; avalanche scintillations were recorded in the Near Infrared (NIR) at wavelengths of up to 950 nm. At avalanche charge gain of 350, the double-THGEM/G-APD multiplier yielded 0.07 photoelectrons per initial ionization electron, corresponding to an avalanche scintillation yield of 0.7 NIR photons per avalanche electron over 4π. The results are compared with those of two-phase Ar avalanche detectors. The advantages, limitations and possible applications are discussed.

Availability note (English)

Available from http://dx.doi.org/10.1088/1748-0221/6/07/P07008

Additional details

Publishing Information

Journal Title
Journal of Instrumentation
Journal Volume
6
Journal Issue
07
Journal Page Range
p. P07008
ISSN
1748-0221

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43046752
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ELECTRONS; GAIN; IONIZATION; OPERATION; PERFORMANCE; PHOTODIODES; READOUT SYSTEMS; SCINTILLATIONS; WAVELENGTHS
Descriptors DEC
AMPLIFICATION; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES