Published May 27, 1982
| Version v1
Journal article
Surface crystallography from low-energy ion backscattering angular distributions
Description
A new method for obtaining the arrangement of atoms at an ordered surface and for determining surface relaxations (to within 2% of interplanar spacings) by use of low-energy ions is presented. The method is illustrated with a computer simulation to generate the backscattered intensity distribution for 3-keV He+ ions normally incident on a Cu(001) surface. When displayed on a position-sensitive detector, the total backscattered yield would reveal blocking-cone features that are real-space images of surface atoms
Additional details
Additional titles
- Augmented title (English)
- 3-keV He"+ ions
Publishing Information
- Journal Title
- J. Phys. Chem.
- Journal Volume
- 86
- Journal Issue
- 11
- Series
- J. Phys. Chem.
- Journal Page Range
- 1924-1927
- ISSN
- 0022-3654
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 14731337
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANGULAR DISTRIBUTION; BACKSCATTERING; COPPER; CRYSTALLOGRAPHY; ION BEAMS; ION SCATTERING ANALYSIS; SPECTROSCOPY; SURFACES
- Descriptors DEC
- BEAMS; CHEMICAL ANALYSIS; DISTRIBUTION; ELEMENTS; METALS; NONDESTRUCTIVE ANALYSIS; SCATTERING; TRANSITION ELEMENTS