Published May 27, 1982 | Version v1
Journal article

Surface crystallography from low-energy ion backscattering angular distributions

  • 1. Univ. of California, Los Angeles

Description

A new method for obtaining the arrangement of atoms at an ordered surface and for determining surface relaxations (to within 2% of interplanar spacings) by use of low-energy ions is presented. The method is illustrated with a computer simulation to generate the backscattered intensity distribution for 3-keV He+ ions normally incident on a Cu(001) surface. When displayed on a position-sensitive detector, the total backscattered yield would reveal blocking-cone features that are real-space images of surface atoms

Additional details

Additional titles

Augmented title (English)
3-keV He"+ ions

Publishing Information

Journal Title
J. Phys. Chem.
Journal Volume
86
Journal Issue
11
Series
J. Phys. Chem.
Journal Page Range
1924-1927
ISSN
0022-3654

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
14731337
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANGULAR DISTRIBUTION; BACKSCATTERING; COPPER; CRYSTALLOGRAPHY; ION BEAMS; ION SCATTERING ANALYSIS; SPECTROSCOPY; SURFACES
Descriptors DEC
BEAMS; CHEMICAL ANALYSIS; DISTRIBUTION; ELEMENTS; METALS; NONDESTRUCTIVE ANALYSIS; SCATTERING; TRANSITION ELEMENTS