Electrical and photoelectrical properties of heterostructures CdTe-CdxHg1-xTe (x∼0.6-0.7)

The heterostructures CdTe-CdxHg1-xTe with p-n transitions fabricated by the methods of indium diffusion from gas phase and of aluminium ion implantation are considered. Epitaxial layers of 15-35 μm thickness have been used for investigation. Volt-farad characteristics of p-n transitions are taken and the thickness of space charge layer for transition obtained by the diffusion method and ion implantation is determined. The lengths of charge carriers path up to optical phonon emission (300 and 350 A) are determined on the basis of dependences of ionization coefficiens for electrons and holes on electrical field intensity