Published April 16, 1984
| Version v1
Journal article
The linear thermal expansion coefficient of a Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ layer on InP:Sn substrate
Creators
- 1. Karl-Marx-Universitaet, Leipzig (German Democratic Republic). Sektion Physik
- 2. Polska Akademia Nauk, Warsaw. Inst. Fizyki
Description
The linear thermal expansion coefficient is measured versus temperature for a quarternary Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ layer (x approximately 0.26, y approximately 0.6) on an InP:Sn substrate by means of lattice constant determination using the Band method. The results are compared with literature data
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 82
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- K137-K140
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 15066697
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- BRAGG REFLECTION; DOPED MATERIALS; EXPERIMENTAL DATA; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LATTICE PARAMETERS; LAYERS; LOW TEMPERATURE; MEDIUM TEMPERATURE; SUBSTRATES; TEMPERATURE DEPENDENCE; THERMAL EXPANSION; TIN ADDITIONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; DATA; EXPANSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INFORMATION; MATERIALS; NUMERICAL DATA; PHOSPHIDES; PHOSPHORUS COMPOUNDS; REFLECTION
Optional Information
- Notes
- Short note.