Published September 1998
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Analysis and recommendations for DPA calculations in SiC
Description
Recent modeling results, coupled with the implications of available experimental results, provide sufficient information to achieve consensus on the values of threshold displacement energies to use in displacements per atom (DPA) calculations. The values recommended here, 20 eV for C and 35 eV for Si, will be presented for adoption by the international fusion materials community at the next IEA SiC/SiC workshop
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Additional details
Publishing Information
- Imprint Title
- Fusion materials semiannual progress report for the period ending June 30, 1998
- Imprint Pagination
- 314 p.
- Journal Page Range
- p. 236-238
- Report number
- DOE/ER--0313/24
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30039850
- Subject category
- S36: MATERIALS SCIENCE; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- CALCULATION METHODS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SILICON CARBIDES; THERMONUCLEAR REACTOR MATERIALS
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; MATERIALS; RADIATION EFFECTS; SILICON COMPOUNDS
Optional Information
- Contract/Grant/Project number
- Contract AC06-76RL01830
- Funding organization
- USDOE, Washington, DC (United States)