Synthesis and Characterization of Ba2Ag2Se2(Se2)
- 1. Indian Inst Technol IIT Hyderabad, Dept Chem, Sangareddy 502285, Telangana (India)
- 2. Univ Montpellier, ICSM, CEA, ENSCM, CNRS, UMR 5257, Site Marcoule Bat 426, BP 17171, F-30207 Bagnols Sur Ceze (France)
- 3. Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 (United States)
- 4. Univ Lorraine, LPCT, Inst Jean Barriol, CNRS, UMR 7019, BP 239, Blvd Aiguillettes, F-54506 vandoeuvre Les Nancy (France)
Description
Single crystals and a polycrystalline sample of Ba2Ag2Se2(Se2) were synthesized by standard solid-state chemistry methods at 1173 and 973 K, respectively. The crystal structure of this ternary compound was established by single-crystal X-ray diffraction studies at 100(2) K. The superstructure of this compound is commensurate and crystallizes in the space group P2(1/c) of a monoclinic system with cell constants of a = 6.1766(2) angstrom, b = 6.1788(2) angstrom, c = 21.5784(8) angstrom, and β = 90.02(1)degrees (Z = 4). The asymmetric unit of the superstructure comprises eight atoms occupying general positions: two Ba atoms, two Ag atoms, and four Se atoms. In this structure, each Ag atom is tetrahedrally coordinated with four adjacent Se atoms to form distorted AgSe4 units that share edges with the neighboring tetrahedra to form a two-dimensional (AgSe4/4)- layer. These layers are separated by Ba2+ and (Se2)2- units. The presence of the (Se2)2- unit is also supported by an intense band at around 247 cm-1 in the Raman spectrum of Ba2Ag2Se2(Se2). A density functional theory study shows that the compound is a semiconductor with a calculated band gap of 1.1 eV. As determined by UV-visible spectroscopy, the direct and indirect band gaps are 1.23(2) and 1.10(2) eV, respectively, in good agreement with the theory and consistent with the black color of the compound. A temperature-dependent resistivity study also confirms the semiconducting nature of Ba2Ag2Se2(Se2). (authors)
Availability note (English)
Available from doi: http://dx.doi.org/10.1021/acs.inorgchem.9b00506Additional details
Identifiers
Publishing Information
- Journal Title
- Inorganic Chemistry
- Journal Volume
- 58
- Journal Issue
- no.12
- Journal Page Range
- p. 7837-7844
- ISSN
- 0020-1669
INIS
- Country of Publication
- United States
- Country of Input or Organization
- France
- INIS RN
- 53055204
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ASYMMETRY; ATOMS; BARIUM IONS; CHEMISTRY; DENSITY FUNCTIONAL METHOD; LAYERS; MONOCLINIC LATTICES; MONOCRYSTALS; POLYCRYSTALS; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; SOLIDS; SPACE GROUPS; SPECTROSCOPY; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL SYSTEMS; X-RAY DIFFRACTION
- Descriptors DEC
- CALCULATION METHODS; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CRYSTALS; DIFFRACTION; IONS; MATERIALS; SCATTERING; SPECTRA; SYMMETRY GROUPS; THREE-DIMENSIONAL LATTICES; VARIATIONAL METHODS