Published June 2013 | Version v1
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Nuclear radiation detector based on ion implanted p-n junction in 4H-SiC

  • 1. Aix-Marseille Universite, Marseille 13397 (France)
  • 2. AMPERE, UMR 5005, INSA de Lyon, 21 Av. Capelle, 69621 Villeurbanne (France)
  • 3. University of Oslo, PO Box 1048 Blindern, NO-0316 Oslo (Norway)
  • 4. Karlsruhe Institute of Technology, Institute of Neutron Physics and Reactor Technology, Karlsruhe 76344 (Germany)
  • 5. Laboratoire Dosimetrie Capteurs Instrumentation, CEA Cadarache 13108 (France)
  • 6. SCK.CEN, B-2400 Mol (Belgium)
  • 7. KTH, Electrum 229, 16440 Kista (Sweden)

Description

In this paper, we propose a new device detector based on ion implanted p-n junction in 4H-SiC for nuclear instrumentation. We showed the interest to use 10Boron as a Neutron Converter Layer in order to detect thermal neutrons. We present the main results obtained during irradiation tests performed in the Belgian Reactor 1. We show the capability of our detector by means of first results of the detector response at different reverse voltage biases and at different reactor power (authors)

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Additional details

Publishing Information

Imprint Pagination
5 p.
Report number
ANIMMA--2013-1201

Conference

Title
3. international conference on Advancements in Nuclear Instrumentation Measurement Methods and their Applications
Acronym
ANIMMA 2013
Dates
23-27 Jun 2013
Place
Marseille (France)

Optional Information

Notes
7 Refs.; Available from the INIS Liaison Officer for France, see the 'INIS contacts' section of the INIS website for current contact and E-mail addresses: http://www.iaea.org/inis/Contacts/