Published April 1996
| Version v1
Journal article
Experimental studies of single-event gate rupture and burnout in vertical power MOSFET's
Creators
- 1. NSWC, Crane, IN (United States)
- 2. Wheatley (C.Frank), Drums, PA (United States)
Description
Numerous studies have revealed that vertical power MOSFET's are susceptible to single-event burnout (SEB) and single-event gate rupture (SEGR), resulting in degraded performance or even catastrophic failure when operated in a cosmic-ray environment like space. This paper summarizes many of those experimental studies and examines the problems, test methodologies, and experimental results. Previously unavailable information on SEGR is also provided
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 43
- Journal Issue
- 2
- Journal Page Range
- p. 533-595.
- ISSN
- 0018-9499
- CODEN
- IETNAE
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27057135
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- COSMIC RADIATION; MOSFET; PERFORMANCE TESTING; PHYSICAL RADIATION EFFECTS; SPACE FLIGHT
- Descriptors DEC
- FIELD EFFECT TRANSISTORS; IONIZING RADIATIONS; MOS TRANSISTORS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; TESTING; TRANSISTORS