Feasibility of PET detector readout by high-density Silicon Photomultipliers with epitaxial quenching resistors
Description
Silicon photomultipliers (SiPMs) have high gain, low bias voltage, excellent timing properties and are insensitive to magnetic fields, which have become the best readout choice for advanced positron emission tomography (PET) systems, such as PET/MRI instruments and time-of-flight (TOF) PET imaging. Novel Device Laboratory (NDL) has been developing an unique SiPM technology that uses the bulk resistors in the epitaxial layer as quenching resistors (EQR SiPM); it features small micro cells with high fill factor, fast response to even a single photon, and simple fabrication technology. This paper reports the results to verify that EQR SiPM is promising in the applications of advanced PET imaging. For the EQR SiPM with active area of 3 × 3 mm2 and 90000 individual cells, the dark count rate of 6.3 MHz at room temperature, a peak PDE of 34% for 420 nm photons and an intrinsic single photon timing resolution (SPTR) of 81 ps at 9 V over-voltage were obtained. By employing a pair of EQR SiPMs 1-to-1 coupled with 2.84 × 2.84× 6 mm3 LYSO crystals, the energy resolution (ER) of ∼10.1% and the coincidence timing resolution (CTR) of ∼195 ps (FWHM) were demonstrated; by employing a pair of EQR SiPMs 1-to-1 coupled with 2.84 × 2.84× 10 mm3 LYSO crystals, the ER of ∼9.8% and the CTR of ∼226 ps (FWHM) were demonstrated.
Availability note (English)
Available from http://dx.doi.org/10.1088/1748-0221/14/05/C05009Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Instrumentation
- Journal Volume
- 14
- Journal Issue
- 05
- Journal Page Range
- p. C05009
- ISSN
- 1748-0221
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51050593
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- COUNTING RATES; CRYSTALS; DENSITY; ELECTRIC POTENTIAL; ENERGY RESOLUTION; EPITAXY; FABRICATION; FILL FACTORS; MAGNETIC FIELDS; NMR IMAGING; PHOTOMULTIPLIERS; PHOTONS; POSITRON COMPUTED TOMOGRAPHY; QUENCHING; READOUT SYSTEMS; RESISTORS; SILICON; TEMPERATURE RANGE 0273-0400 K; TIME-OF-FLIGHT METHOD; TIMING PROPERTIES
- Descriptors DEC
- BOSONS; COMPUTERIZED TOMOGRAPHY; CRYSTAL GROWTH METHODS; DIAGNOSTIC TECHNIQUES; DIMENSIONLESS NUMBERS; ELECTRICAL EQUIPMENT; ELEMENTARY PARTICLES; ELEMENTS; EMISSION COMPUTED TOMOGRAPHY; EQUIPMENT; MASSLESS PARTICLES; PHOTOTUBES; PHYSICAL PROPERTIES; RESOLUTION; SEMIMETALS; TEMPERATURE RANGE; TOMOGRAPHY