Published 1990
| Version v1
Miscellaneous
Study of state occupation efficiency into channel during relativistic electron passing along a crystallographic axis
Creators
Description
Short note. 2 refs
Additional details
Additional titles
- Original title (Russian)
- Изучение эффективности заселения состояний внутри канала при прохождении релятивистских электронов вдоль кристаллографической оси
Publishing Information
- Imprint Title
- Theses of the reports of the 20. All-union conference on physics of charged particle interaction with crystals
- Imprint Pagination
- 170 p.
- Journal Page Range
- p. 37.
- Report number
- INIS-SU--220
Conference
- Title
- 20. All-union conference on physics of charged particle interaction with crystals.
- Dates
- 28-30 May 1990.
- Place
- Moscow (USSR).
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 22010640
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ELECTRON CHANNELING; MEV RANGE 10-100; MONOCRYSTALS; OCCUPATION NUMBER; ORIENTATION; RANGE; SILICON
- Descriptors DEC
- CHANNELING; CRYSTALS; ELEMENTS; ENERGY RANGE; MEV RANGE; SEMIMETALS
Optional Information
- Notes
- Imprint:Tezisy dokladov 20. Vsesoyuznogo soveshchaniya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami.