Published April 15, 1992
| Version v1
Journal article
The migration of the defects induced by high-dose ion implantation of arsenic in silicon
Description
Short note
Additional details
Publishing Information
- Journal Title
- Journal of Materials Science Letters
- Journal Volume
- 11
- Journal Issue
- 8
- Series
- J. Mater. Sci. Lett.
- Journal Page Range
- 488-489
- ISSN
- 0261-8028
- CODEN
- JMSLD
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 23061495
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ARSENIC IONS; DISLOCATIONS; ION IMPLANTATION; MOBILITY; MOSFET; PHYSICAL RADIATION EFFECTS; SILICON
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; FIELD EFFECT TRANSISTORS; HEAT TREATMENTS; IONS; LINE DEFECTS; MOS TRANSISTORS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS