Published September 2004
| Version v1
Journal article
Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment
- 1. Northwest Inst. of Nuclear Technology, Xi'an (China)
Description
The experiments of ionizing radiation were performed on floating gate ROM devices by using 60Co γ-rays. The experimental aim was to examine the radiation response at various dose rates. According to the extrapolation technique and the defined failure criteria , the parameter failure and function failure of devices vs. dose rate were studied. Finally, based on the function of failure time vs. dose rate, the failure time of floating gate ROM device in space radiation environment was predicted
Additional details
Publishing Information
- Journal Title
- Acta Physica Sinica
- Journal Volume
- 53
- Journal Issue
- 9
- Journal Page Range
- p. 3125-3129
- ISSN
- 1000-3290
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 36026817
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- COBALT 60; DAMAGE; DEAD TIME; DOSE RATES; FAILURES; GAMMA RADIATION; INTEGRATED CIRCUITS; LOW DOSE IRRADIATION; MEMORY DEVICES; PHYSICAL RADIATION EFFECTS; READOUT SYSTEMS; SPACE FLIGHT; TIME DEPENDENCE
- Descriptors DEC
- BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; COBALT ISOTOPES; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; IONIZING RADIATIONS; IRRADIATION; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MICROELECTRONIC CIRCUITS; MINUTES LIVING RADIOISOTOPES; NUCLEI; ODD-ODD NUCLEI; RADIATION EFFECTS; RADIATIONS; RADIOISOTOPES; TIMING PROPERTIES; YEARS LIVING RADIOISOTOPES