Investigation of point defect clusters in Si single crystals using γ-quantum diffraction

The effect of point defect clusters in Si single crystals volume on such parameters of γ-radiation diffraction process with 0.03 A wave length, as the reflection integral coefficient value, the oscillation curve mode and semiwidth, is investigated. It is shown, that hard γ-radiation diffraction may be used to conduct investigation and non-destructive control over the point defect cluster inhomogeneous distribution. High efficiency of thermal treatment in chlorine-containing atmosphere to suppress cluster defects in silicon monocrystals of a large volume is ascertained