Solid-state disordering and melting of silica stishovite: the role of defects
- 1. P-24 Plasma Physics, Los Alamos National Laboratory, Los Alamos, NM 87544 (United States)
- 2. Department of Chemistry, University of Missouri, Columbia, MO 65211 (United States)
- 3. High-Pressure Science and Engineering Center and Department of Physics, University of Nevada, Las Vegas, NV 89154 (United States)
Description
Molecular dynamics simulations are conducted to investigate disordering of stishovite (a high-pressure polymorph of silica) and the role of defects including grain boundaries, vacancies and free surfaces. It is shown that pre-existent defects initiate or facilitate solid-state disordering and melting. As illustrated in the case of vacancies, melting precedes solid-state disordering for stishovite with low defect concentrations, while defect-rich stishovite may transform into high-density vitreous silica which then undergoes a (quasi-)continuous transition into melt. In sharp contrast, melting of ordinary glass at the same heating rate is sluggish yet evidently first order. Disordering on free surfaces is anisotropic, being more pronounced on (101), (011) and (111) than on (100) (010) (001) and (110) crystallographic planes
Availability note (English)
Available online at http://stacks.iop.org/0953-8984/18/659/cm6_2_021.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0953-8984/18/659/cm6_2_021.pdf;
- DOI
- 10.1088/0953-8984/18/2/021;
- PII
- S0953-8984(06)08165-3;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 18
- Journal Issue
- 2
- Journal Page Range
- p. 659-668
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37061534
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANISOTROPY; COMPUTERIZED SIMULATION; CRYSTALLOGRAPHY; DENSITY; GLASS; GRAIN BOUNDARIES; HEATING RATE; MELTING; MOLECULAR DYNAMICS METHOD; PRESSURE DEPENDENCE; SILICA; SOLIDS; STISHOVITE; SURFACES; VACANCIES
- Descriptors DEC
- CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; MICROSTRUCTURE; MINERALS; OXIDE MINERALS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; POINT DEFECTS; SIMULATION