Published 1980
| Version v1
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Laser-annealed GaP OHMIC contacts for high-temperature devices
Description
The results of successful Nd:YAG laser annealed ohmic contacts on n-type GaP are reported. Comparisons on identical laser and thermal annealed contacts on the same substrates are performed. Aging investigations are also studied. The results indicate that laser annealed contacts have far superior electrical characteristics, much better surface morphology and are substantially more stable with aging than the same but thermally alloyed ones
Availability note (English)
MF available from INIS under the Report Number; Available from NTIS., PC A02/MF A01.
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Additional details
Publishing Information
- Imprint Pagination
- 6 p.
- Report number
- SAND--80-2679C
Conference
- Title
- 3. annual meeting of the Materials Research Society.
- Dates
- 17 - 20 Nov 1980.
- Place
- Boston, MA, USA.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 12592319
- Subject category
- S42: ENGINEERING; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ELECTRIC CONTACTS; ELECTRICAL PROPERTIES; GALLIUM PHOSPHIDES; LASER RADIATION; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ELECTRICAL EQUIPMENT; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; HEAT TREATMENTS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS
Optional Information
- Secondary number(s)
- CONF-801124--25.