Published April 9, 2008 | Version v1
Journal article

Selective optical pumping of charged excitons in unintentionally doped InAs quantum dots

  • 1. Instituto de Ciencias de los Materiales, Universitat de Valencia, PO Box 22085, 46071 Valencia (Spain)
  • 2. Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain)
  • 3. Istituto dei Materiali per l'Elettronica e il Magnetismo (CNR), Parco delle Scienze 37/a, I-43100 Parma (Italy)

Description

We have investigated the selective optical pumping of charged excitonic species in a sample containing quantum dots of different sizes and low areal density by photoluminescence and excitation of the photoluminescence microspectroscopy. We study the selective optical excitation of negatively charged excitons as an alternative to commonly used electrical methods. We demonstrate that under resonant excitation in impurity related bands, the selective pumping efficiency can be as high as 85% in small quantum dots having one electron shell and emitting at around 930 nm, and around 65% in big quantum dots having four electron shells and emitting at 1160 nm

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/19/14/145711

Additional details

Identifiers

DOI
10.1088/0957-4484/19/14/145711;
PII
S0957-4484(08)66064-X;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
19
Journal Issue
14
Journal Page Range
[6 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39108560
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DOPED MATERIALS; EXCITATION; EXCITONS; INDIUM ARSENIDES; OPTICAL PUMPING; PHOTOLUMINESCENCE; QUANTUM DOTS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; EMISSION; ENERGY-LEVEL TRANSITIONS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; PUMPING; QUASI PARTICLES