Published April 9, 2008
| Version v1
Journal article
Selective optical pumping of charged excitons in unintentionally doped InAs quantum dots
Creators
- 1. Instituto de Ciencias de los Materiales, Universitat de Valencia, PO Box 22085, 46071 Valencia (Spain)
- 2. Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain)
- 3. Istituto dei Materiali per l'Elettronica e il Magnetismo (CNR), Parco delle Scienze 37/a, I-43100 Parma (Italy)
Description
We have investigated the selective optical pumping of charged excitonic species in a sample containing quantum dots of different sizes and low areal density by photoluminescence and excitation of the photoluminescence microspectroscopy. We study the selective optical excitation of negatively charged excitons as an alternative to commonly used electrical methods. We demonstrate that under resonant excitation in impurity related bands, the selective pumping efficiency can be as high as 85% in small quantum dots having one electron shell and emitting at around 930 nm, and around 65% in big quantum dots having four electron shells and emitting at 1160 nm
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/19/14/145711Additional details
Identifiers
- DOI
- 10.1088/0957-4484/19/14/145711;
- PII
- S0957-4484(08)66064-X;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 19
- Journal Issue
- 14
- Journal Page Range
- [6 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39108560
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DOPED MATERIALS; EXCITATION; EXCITONS; INDIUM ARSENIDES; OPTICAL PUMPING; PHOTOLUMINESCENCE; QUANTUM DOTS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; EMISSION; ENERGY-LEVEL TRANSITIONS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; PUMPING; QUASI PARTICLES