Individual Electron and Hole Mobilities in Lead-Halide Perovskites Revealed by Noncontact Methods

Charge carrier mobilities help determine semiconductor performance in optoelectronic applications, but measurement of the individual electron and hole mobilities usually involves indirect methods or probes with electrical contacts that are influenced by the quality of the interface or contact. Here, a noncontact method is introduced to distinguish the mobilities of electrons and holes by combining time-resolved terahertz spectroscopy (TRTS) and optical transient reflection (TR) spectroscopy. The validation of this method is first demonstrated on a semi-insulator GaAs wafer, and then, three lead-halide perovskite polycrystalline films with different cation mixtures are studied. We find that the hole mobility is significantly higher (~10x) than that of the electron mobility in all of the perovskite thin films studied. The highly alloyed triple cation polycrystalline film shows the highest mobility, longest bulk carrier lifetime, and lowest surface recombination velocity.