Highly efficient photovoltaic cells based on In0.53Ga0.47 as alloys with isovalent doping

The effect of isovalent doping with P on the surface and bulk properties of the In0.53Ga0.47As alloy (below, InGaAs) was evaluated from variations in the photoluminescence and transmission spectra. It is established that isovalent doping decreases the nonradiative recombination rate in the bulk and on the surface of doped layers. The use of additional isovalent doping provided an improvement of parameters of the narrow-gap InGaAs-based solar cell used for the conversion of the concentrated solar radiation. The maximum efficiency of photovoltaic conversion in a spectral range of 900-1840 nm was 7.4-7.35% at a ratio of concentration of the solar radiation of 500-1000 for the AM1.5D Low AOD spectrum.