The features of rare-earth elements diffusion at the annealing of implanted silicon layers

The behaviour of implanted rare-earth impurity at annealing of silicon was investigated. Dependence of efficiency of rare-earth atoms migration was established depending on a kind and a doze of in addition introduced alloying impurity (B, Sb, P). Observable effects were caused by ytterbium diffusion to a surface both under action of elastic pressure of discrepancy, and owing to the increased vacancies concentration in a surface layer. The essential role is played also with movement of the given impurity together with a front of recrystallization. (authors)