Published October 9, 2006 | Version v1
Journal article

Band gap properties of Zn1-xCdxO alloys grown by molecular-beam epitaxy

  • 1. SVT Associates, Eden Prairie, Minnesota 55344 (United States)
  • 2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
  • 3. Department of Physics, Shahrood University of Technology, Shahrood, P.O. Box 36155-316, Iran (Iran, Islamic Republic of)
  • 4. Department of Physics, Chemistry and Biology, Linkoeping University, S-581 83 Linkoeping (Sweden)

Description

Optical absorption and reflectance measurements are performed to evaluate compositional and temperature dependences of band gap energies of Zn1-xCdxO alloys grown by molecular-beam epitaxy. The compositional dependence of the band gap energy, determined by taking into account excitonic contributions, is shown to follow the trend Eg(x)=3.37-2.82x+0.95x2. Incorporation of Cd was also shown to somewhat slow down thermal variation of the band gap energies, beneficial for future device applications

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
89
Journal Issue
15
Journal Page Range
p. 151909-151909.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Optional Information

Notes
(c) 2006 American Institute of Physics