Peculiarities of the determination of shallow impurity concentrations in semiconductors from the analysis of exciton luminescence spectra

An analysis was made of the applicability limits of the method for the determination of the content of shallow acceptors and donors in semiconductors from the ratio of the low-temperature (T = 1.8-4.2 K) luminescence intensities of exciton bands, in particular, induces by radiative annihilation of excitons bound to acceptors (donors) and free excitons. It is shown that correct data about the concentrations of shallow acceptors and donors as well as data on changes in their content as a result of various treatments may be obtained if the occupancy of the defects in question by holes and electrons does not depend on the excitation intensity or external treatments. A way to check the fulfillment of criteria for the method application is suggested. An example is given is given of the method application for determination of thermally stimulated changes in the concentration of shallow acceptors and donors in gallium arsenide