Published June 2009 | Version v1
Journal article

Biexcitonic photocurrent induced by two-photon process at a telecommunication band

  • 1. Institute for Nano Quantum Information Electronics, University of Tokyo (Japan)
  • 2. Research Center for Advanced Science and Technology, University of Tokyo (Japan)
  • 3. Institute of Industrial Science, University of Tokyo (Japan)

Description

We report on photocurrent (PC) measurements of biexciton in a single self-assembled InAs quantum dot (QD) at a telecommunication wavelength of 1.3μm. We use shadow mask technique on an n-i Schottky photodiode structure with QDs to excite a single QD resonantly. Coherent pulse excitation is realized in two types of setups utilizing (i) an optical parametric oscillator and (ii) a stable semiconductor laser diode. In both setups we observe the biexcitonic PC peaks induced by a coherent two-photon process. Especially in the latter setups, the narrower pulse linewidth in energy provides a clearer biexcitonic PC peak because of reduced unwanted excitation. We estimate the binding energy ΔEB of our telecom-band biexciton to be 0.9 meV from the splitting between excitonic and biexcitonic resonances. The result suggests our telecom-band exciton-biexciton system is a good candidate for the building block of fiber-based controlled-rotation quantum logic operation. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200881527

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. C, Current Topics in Solid State Physics (Print)
Journal Volume
6
Journal Issue
6
Journal Page Range
p. 1445-1448
ISSN
1862-6351

Conference

Title
35. International symposium on compound semiconductors (ISCS 2008)
Dates
21-24 Sep 2008
Place
Rust (Germany)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
40070362
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BINDING ENERGY; EXCITONS; INDIUM ARSENIDES; MULTI-PHOTON PROCESSES; NEAR INFRARED RADIATION; PHOTOCURRENTS; QUANTUM DOTS; RESONANCE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; ELECTRIC CURRENTS; ELECTROMAGNETIC RADIATION; ENERGY; INDIUM COMPOUNDS; INFRARED RADIATION; NANOSTRUCTURES; PNICTIDES; QUASI PARTICLES; RADIATIONS

Optional Information

Notes
With 4 figs., 0 tabs., 13 refs.; SICI: 1862-6351(200906)6:6<1445::AID-PSSC200881527>3.0.TX;2-8