Method for creating the profiles of ion implantation in samples

The method of obtaining the samples used for studying the character of ion implantation and its effect on the change of material properties depending on the energy of bombarding particles is suggested. The method is based on implantation in the sample of accelerated ions the energy of which is changed along the sample surface by braking when passing through mask of variable thickness. As a mask metallic foil, the thickness of which is changed by its bending, is used. The change in doping profile in the depth of the sample is attained by uniform foil sehifting perpendicularly to the incident ions motion in the direction along which foil slope to the sample surface is changed. The suggested method allows one to vary the energy of bombarding ions which substantially simplifies the analysis and interpretation of obtained experimental results. The method can be used for creating given doping profiles in the depth of the sample