Surface structures of L10-MnGa (001) by scanning tunneling microscopy and first-principles theory
Creators
- 1. Nanoscale and Quantum Phenomena Institute, Department of Physics and Astronomy, Ohio University, Athens, OH 45701 (United States)
- 2. Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autónoma de México, Apartado Postal 14, Ensenada Baja California, Código Postal 22800 (Mexico)
Description
Highlights: • Discovery of surface structures of the technologically important (001) L10-MnGa surface. • Two reconstructions: a 1 × 1 Ga-terminated structure and a 1 × 2 Mn substituted Ga-termination. • The 1 × 2 Mn substituted atoms couple antiferromagnetically to the underlying Mn atoms. - Abstract: We report on the surface reconstructions of L10-ordered MnGa (001) thin films grown by molecular beam epitaxy on a 50 nm Mn3N2 (001) layer freshly grown on a magnesium oxide (001) substrate. Scanning tunneling microscopy, Auger electron spectroscopy, and reflection high energy electron diffraction are combined with first-principles density functional theory calculations to determine the reconstructions of the L10-ordered MnGa (001) surface. We find two lowest energy reconstructions of the MnGa (001) face: a 1 × 1 Ga-terminated structure and a 1 × 2 structure with a Mn replacing a Ga in the 1 × 1 Ga-terminated surface. The 1 × 2 reconstruction forms a row structure along [100]. The manganese:gallium stoichiometry within the surface based on theoretical modeling is in good agreement with experiment. Magnetic moment calculations for the two lowest energy structures reveal important surface and bulk effects leading to oscillatory total magnetization for ultra-thin MnGa (001) films.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2017.06.030Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2017.06.030;
- PII
- S0169-4332(17)31674-4;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 422
- Journal Page Range
- p. 985-989
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49069739
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- AUGER ELECTRON SPECTROSCOPY; DENSITY FUNCTIONAL METHOD; ELECTRON DIFFRACTION; GALLIUM; LAYERS; MAGNESIUM OXIDES; MAGNETIC MOMENTS; MAGNETIZATION; MANGANESE; MANGANESE NITRIDES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SCANNING TUNNELING MICROSCOPY; STOICHIOMETRY; SUBSTRATES; SURFACES; THIN FILMS; TUNNEL EFFECT
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; BEAMS; CALCULATION METHODS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON SPECTROSCOPY; ELEMENTS; EPITAXY; FILMS; MAGNESIUM COMPOUNDS; MANGANESE COMPOUNDS; METALS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; SCATTERING; SPECTROSCOPY; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.