Published February 2003
| Version v1
Journal article
Frequency shifts and local spin susceptibility of muonium in heavily-doped Si and GaAs
Description
We report high transverse field μSR measurements in heavily doped p-type Si as well as p-type and n-type GaAs. In all these samples, the precession frequencies due to diamagnetic Mu+ and Mu- are within ∼10 ppm of the Larmor frequency of the bare muon. In contrast to heavily doped n-type Si, no metastable neutral muonium centers are observed
Additional details
Identifiers
- PII
- S0921452602015958;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 326
- Journal Issue
- 1-4
- Journal Page Range
- p. 175-177
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36091825
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DOPED MATERIALS; GALLIUM ARSENIDES; METASTABLE STATES; MUON SPIN RELAXATION; MUONIUM; MUONS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PRECESSION; SPIN; SPIN EXCHANGE
- Descriptors DEC
- ANGULAR MOMENTUM; ARSENIC COMPOUNDS; ARSENIDES; ELEMENTARY PARTICLES; ENERGY LEVELS; EXCITED STATES; FERMIONS; GALLIUM COMPOUNDS; LEPTONS; MATERIALS; PARTICLE PROPERTIES; PNICTIDES; RELAXATION; SEMICONDUCTOR MATERIALS
Optional Information
- Copyright
- Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.