Published October 16, 1983
| Version v1
Journal article
The influence of cesium implanted in silicon on the secondary ion emission
- 1. Humboldt-Universitaet, Berlin (German Democratic Republic). Sektion Physik
Description
The dependence of ion emission on the cesium concentration (N/sub Cs/) at the surface of Si has been studied by dynamic SIMS and ion microscopy. N-type silicon crystals were implanted with 133Cs+ ions at 120 keV and different doses to change N/sub Cs/. The depth profiles of Cs implantations were measured together with the corresponding negative and positive silicon and silicon cluster emission by the aid of an ion microscope. A qualitative agreement between the cesium distribution and the silicon ion emission is shown
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 79
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- K193-K196
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 15026254
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- CESIUM ADDITIONS; CESIUM 133; DEPTH; DOPED MATERIALS; ION BEAMS; ION IMPLANTATION; ION MICROSCOPY; ION PAIRS; MASS SPECTROSCOPY; RADIATION DOSES; SILICON; SILICON IONS; SPATIAL DISTRIBUTION
- Descriptors DEC
- ATOMIC IONS; BEAMS; CESIUM ISOTOPES; CHARGED PARTICLES; DIMENSIONS; DISTRIBUTION; ELEMENTS; INTERMEDIATE MASS NUCLEI; IONS; ISOTOPES; MATERIALS; MICROSCOPY; NUCLEI; ODD-EVEN NUCLEI; SEMIMETALS; SPECTROSCOPY; STABLE ISOTOPES
Optional Information
- Notes
- Short note.