Electron traps induced in n-type GaP by phosphorus ion doping

The results of studying thermostimulated relaxation spectra (DLTS) of the barrier capacity of Schottky diodes (SD) based on n-GaP epitaxial layers (EL) implanted with phosphorus ions and subjected to rapid annealing (RA) are discussed. DLTS spectra were recorded in the 100-440 K temperature range. They show that induced electron traps, implanted with phosphorus ions and subjected to rapid annealing, with E1=0.13, E2=0.20, E3=0.23, E4=0.44 and E6=0.56 eV are conditioned by their own point defects and their complexes with background impurities