Published July 1992 | Version v1
Journal article Metadata-only

Electric conductivity of silicon doped borate-barium-molybdenum glass

Creators

  • 1. Ural'skij Politekhnicheskij Inst., Sverdlovsk (Russian Federation)

Description

Effect of silicon additions on electric conductivity of borate-barium-molybdate glass was studied. Analysis of temperature dependences of resistance of silicon doped samples of partially crystallized borate-barium-molybdate glass (8 mass% MoO3), where Si content varies from 0.20 to 1.16 mass%, shows, that at CSi ≤ 0.58 mass% electric resistance of oxide system is determined by donor impurities, which occur in result of partial break (under the effect of reducer) of formed Mo-O bonds

Additional details

Additional titles

Original title (Russian)
Электропроводност' боратно-барий-молибдатного стекла, легированного кремнием

Publishing Information

Journal Title
Neorganicheskie Materialy
Journal Volume
28
Journal Issue
7
Journal Page Range
p. 1461-1465.
CODEN
NEOMB8

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
24049523
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BARIUM OXIDES; BORON OXIDES; ELECTRIC CONDUCTIVITY; GLASS; MOLYBDENUM OXIDES; SILICON ADDITIONS; TEMPERATURE DEPENDENCE
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; BARIUM COMPOUNDS; BORON COMPOUNDS; CHALCOGENIDES; ELECTRICAL PROPERTIES; MOLYBDENUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TRANSITION ELEMENT COMPOUNDS