Published November 2006
| Version v1
Journal article
Effect of the reverse voltage to the Si-PIN detector
Creators
- 1. Chinese Academy of Sciences, Beijing (China). Inst. of High Energy Physics, Particles and High Energy Astrophysics Center
Description
Reverse voltage can cause two obvious changes of a Si-PIN detector. The detector terminal capacitance reduces and dark current increases when the reverse voltage increases, while both terminal capacitance and dark current are the most important aspects that affect the performance of the Si-PIN detectors. The authors will discuss the relationship between the reverse voltage and energy resolution of a spectrometer based on Si-PIN detector, and determine some principle of selecting the reverse voltage. (authors)
Additional details
Publishing Information
- Journal Title
- Nuclear Electronics and Detection Technology
- Journal Volume
- 26
- Journal Issue
- 6
- Journal Page Range
- p. 796-800
- ISSN
- 0258-0934
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 38085540
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ENERGY RESOLUTION; JUNCTION DETECTORS; PERFORMANCE; SI SEMICONDUCTOR DETECTORS; SPECTROMETERS
- Descriptors DEC
- CURRENTS; ELECTRICAL PROPERTIES; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; RADIATION DETECTORS; RESOLUTION; SEMICONDUCTOR DETECTORS
Optional Information
- Notes
- 5 figs., 6 tabs.