Published November 2006 | Version v1
Journal article

Effect of the reverse voltage to the Si-PIN detector

  • 1. Chinese Academy of Sciences, Beijing (China). Inst. of High Energy Physics, Particles and High Energy Astrophysics Center

Description

Reverse voltage can cause two obvious changes of a Si-PIN detector. The detector terminal capacitance reduces and dark current increases when the reverse voltage increases, while both terminal capacitance and dark current are the most important aspects that affect the performance of the Si-PIN detectors. The authors will discuss the relationship between the reverse voltage and energy resolution of a spectrometer based on Si-PIN detector, and determine some principle of selecting the reverse voltage. (authors)

Additional details

Publishing Information

Journal Title
Nuclear Electronics and Detection Technology
Journal Volume
26
Journal Issue
6
Journal Page Range
p. 796-800
ISSN
0258-0934

Optional Information

Notes
5 figs., 6 tabs.