Published August 1985
| Version v1
Journal article
Amorphous-silicon photovoltaic x-ray sensor
- 1. Osaka Univ., Toyonaka (Japan). Faculty of Engineering Science
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Jpn. J. Appl. Phys., Part 1
- Journal Volume
- 24
- Journal Issue
- 8
- Series
- Jpn. J. Appl. Phys., Part 1.
- Journal Page Range
- 1105-1106
- CODEN
- JAPND
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 17065726
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- AMORPHOUS STATE; ENERGY DEPENDENCE; PHOSPHORS; PHOTOVOLTAIC CELLS; SENSITIVITY; SI SEMICONDUCTOR DETECTORS; SILICON; THIN FILMS; X-RAY DETECTION
- Descriptors DEC
- DETECTION; DIRECT ENERGY CONVERTERS; ELEMENTS; FILMS; MEASURING INSTRUMENTS; PHOTOELECTRIC CELLS; RADIATION DETECTION; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMIMETALS
Optional Information
- Notes
- Published in summary form only.