Microstructural properties and local order around iron in granular metal-insulator Fe/Si3N4 systems prepared by magnetron sputtering
- 1. Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones CientIficas, Cantoblanco, 28049 Madrid (Spain)
- 2. Departamento Engenharia Ceramica e do Vidro, Universidade de Aveiro, 3810-193 Aveiro (Portugal)
- 3. Centro de Microanalisis de Materiales, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain)
Description
[Fe/Si3N4] multilayers have been prepared by magnetron sputtering with a layer thickness of 3 nm for silicon nitride and the iron layer ranging from 1 to 10 nm. A variety of techniques for determining the microstructure, such as x-ray reflectivity, transmission electron microscopy and Rutherford backscattering spectrometry techniques, have been performed to unveil the microstructure of such samples. Also, an analysis of the local environment around iron, by means of extended x-ray absorption fine structure and x-ray absorption near-edge structure spectroscopies performed at the Fe K-edge, confirms the presence of two phases forming the iron layers, the metallic Fe and the FeN phase. Special emphasis has been placed on the x-ray absorption analysis for multilayers with smaller Fe layer thicknesses, which present features of granular systems.
Availability note (English)
Available from http://dx.doi.org/10.1088/0022-3727/41/20/205009Additional details
Identifiers
- DOI
- 10.1088/0022-3727/41/20/205009;
- PII
- S0022-3727(08)81153-9;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 41
- Journal Issue
- 20
- Journal Page Range
- [8 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41017695
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION; FINE STRUCTURE; IRON; IRON NITRIDES; LAYERS; MAGNETRONS; MICROSTRUCTURE; REFLECTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON NITRIDES; SPUTTERING; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION
- Descriptors DEC
- DIMENSIONS; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; IONIZING RADIATIONS; IRON COMPOUNDS; METALS; MICROSCOPY; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NITRIDES; NITROGEN COMPOUNDS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SILICON COMPOUNDS; SORPTION; SPECTROSCOPY; SURFACE PROPERTIES; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS