Phase binarization in mutually synchronized bias field free spin-Hall nano-oscillators for reservoir computing
- 1. Natural Sciences and Science Education, National Institute of Education, Nanyang Technological University 637616, Singapore
- 2. Department of Physics, Indian Institute of Technology Kanpur, Uttar Pradesh 208016, India
- 3. Faculty of Computer Science and System Engineering, Kyushu Institute of Technology, Iizuka 820-8502, Japan
- 4. Research Center for Neuromorphic AI hardware, Kyushu Institute of Technology, Kitakyushu 808-0196, Japan
Description
Mutually coupled spin-Hall nano-oscillators (SHNO) can exhibit a binarized phase state, offering pathways to realize Ising machines and efficient neuromorphic hardware. Conventionally, phase binarization is achieved in coupled identical SHNOs via injecting an external microwave at twice the oscillator frequency in the presence of a strong biasing magnetic field. However, this technology poses potential challenges of higher energy consumption and complex circuit design. Moreover, differences in the individual characteristic frequencies of SHNOs resulting from fabrication-induced mismatch in SHNO dimensions may hinder their mutual synchronization. Addressing these challenges, we demonstrate purely dc current-driven mutual synchronization and phase binarization of two nonidentical nanoconstriction SHNOs without biasing magnetic field and microwave injection. We thoroughly investigate these phenomena and underlying mechanisms using micromagnetic simulation. We show how the localized fundamental mode of the spin wave emerging from the magnetization auto-oscillation reinforces the mutual synchronization, while the second-harmonic spin wave induces the phase binarization in the coupled SHNO pair. We further demonstrate the bias field free synchronized SHNO pair efficiently performing a reservoir computing benchmark learning task: sin- and square-wave classification, with 100% accuracy, utilizing the current-tunable phase binarization phenomenon. Our results showcase promising magnetization dynamics of coupled bias field free SHNOs for future computing applications.
Additional details
Identifiers
- DOI
- 10.1103/PhysRevB.109.214425;
- arXiv
- arXiv:2404.04023;
- Crossref Funder ID
- 10.13039/501100001381; 10.13039/501100001459;
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 109
- Journal Issue
- 21
- Journal Page Range
- 12 pgs.
- ISSN
- 1550-235X
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ACCURACY; BENCHMARKS; CLASSIFICATION; ENERGY CONSUMPTION; FABRICATION; HALL EFFECT; HARMONIC GENERATION; HARMONICS; INJECTION; MAGNETIC FIELDS; MAGNETIZATION; MICROWAVE RADIATION; OSCILLATIONS; OSCILLATORS; SPIN; SYNCHRONIZATION
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELECTRONIC EQUIPMENT; EQUIPMENT; FREQUENCY MIXING; INTAKE; OSCILLATIONS; PARTICLE PROPERTIES; RADIATIONS
Optional Information
- Copyright
- ©2024 American Physical Society
- Contract/Grant/Project number
- NRF-CRP21-2018-0003; RG76/22
- Notes
- Contact Email: Contact author: rajdeep.rawat@nie.edu.sg; Record automatically processed
- Funding organization
- National Research Foundation Singapore; Ministry of Education - Singapore