Published September 1989 | Version v1
Journal article Metadata-only

Edge photoluminescence of n-type InP crystals irradiated with 3.5-4 MeV electrons

Creators

  • 1. Institute of Applied Physics, Kishinev (USSR)
  • 2. Institute of Solid-State and Semiconductor Physics, Minsk (USSR)

Description

Electron irradiation of n-type InP crystals created two narrow edge photoluminescence bands at 1.305 and 1.392 eV (T = 4.2 K), which were due to radiative transitions of free electrons to two levels of an acceptor defect InP. Removal of free electrons from n-type InP and enhancement of the fall of the intensity of the donor-acceptor (1.376 eV) and exciton (1.416 eV) photoluminescence bands were observed beginning from an electron dose D ∼ 3 x 1016 cm-2

Additional details

Publishing Information

Journal Title
Soviet Physics - Semiconductors (English Translation)
Journal Volume
23
Journal Issue
9
Series
Sov. Phys. - Semicond. (Engl. Transl.).
Journal Page Range
980-981
ISSN
0038-5700
CODEN
SPSEA

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
21089658
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
DATA PROCESSING; ELECTRONS; EXPERIMENTAL DATA; INDIUM PHOSPHIDES; MEASURING INSTRUMENTS; MEASURING METHODS; MEV RANGE 01-10; N-TYPE CONDUCTORS; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; ULTRALOW TEMPERATURE; USSR
Descriptors DEC
DATA; DEVELOPED COUNTRIES; ELEMENTARY PARTICLES; EMISSION; ENERGY RANGE; EUROPE; FERMIONS; INDIUM COMPOUNDS; INFORMATION; LEPTONS; LUMINESCENCE; MATERIALS; MEV RANGE; NUMERICAL DATA; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PNICTIDES; RADIATION EFFECTS

Optional Information

Notes
Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (USSR).