Published 1993 | Version v1
Report Open

Ion beam-assisted deposition of boron nitride from a condensed layer of diborane and ammonia at 78 K

  • 1. State Univ. of New York, Stony Brook, NY (United States). Dept. of Chemistry
  • 2. Brookhaven National Lab., Upton, NY (United States)

Description

This paper examines the ion beam-assisted deposition (IBAD) of thin boron nitride films using cryogenically condensed precursors. Low energy (1100 eV) argon ad (2000 eV) deuterated ammonia beams with currents of 600--850 nA were used to mix and initiate reactions in frozen (90 K) layers of diborane (B2H6 and ammonia (NH3) or only B2H6, respectively. The resulting film is shown to be an amorphous BN coating approximately 30 Angstrom thick

Availability note (English)

MF available from INIS under the Report Number; Also available from OSTI as DE94006058; NTIS; US Govt. Printing Office Dep.

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Additional details

Publishing Information

Imprint Pagination
5 p.
Report number
BNL--49904

Conference

Title
Fall meeting of the Materials Research Society (MRS).
Dates
29 Nov - 3 Dec 1993.
Place
Boston, MA (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
25038378
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BINDING ENERGY; BORON NITRIDES; ENERGY DEPOSITION; ION BEAMS; PHOTOELECTRON SPECTROSCOPY; THIN FILMS; X-RAY SPECTRA
Descriptors DEC
BEAMS; BORON COMPOUNDS; ELECTRON SPECTROSCOPY; ENERGY; FILMS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SPECTRA; SPECTROSCOPY