Published 1993
| Version v1
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Ion beam-assisted deposition of boron nitride from a condensed layer of diborane and ammonia at 78 K
- 1. State Univ. of New York, Stony Brook, NY (United States). Dept. of Chemistry
- 2. Brookhaven National Lab., Upton, NY (United States)
Description
This paper examines the ion beam-assisted deposition (IBAD) of thin boron nitride films using cryogenically condensed precursors. Low energy (1100 eV) argon ad (2000 eV) deuterated ammonia beams with currents of 600--850 nA were used to mix and initiate reactions in frozen (90 K) layers of diborane (B2H6 and ammonia (NH3) or only B2H6, respectively. The resulting film is shown to be an amorphous BN coating approximately 30 Angstrom thick
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MF available from INIS under the Report Number; Also available from OSTI as DE94006058; NTIS; US Govt. Printing Office Dep.Files
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Additional details
Publishing Information
- Imprint Pagination
- 5 p.
- Report number
- BNL--49904
Conference
- Title
- Fall meeting of the Materials Research Society (MRS).
- Dates
- 29 Nov - 3 Dec 1993.
- Place
- Boston, MA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 25038378
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BINDING ENERGY; BORON NITRIDES; ENERGY DEPOSITION; ION BEAMS; PHOTOELECTRON SPECTROSCOPY; THIN FILMS; X-RAY SPECTRA
- Descriptors DEC
- BEAMS; BORON COMPOUNDS; ELECTRON SPECTROSCOPY; ENERGY; FILMS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SPECTRA; SPECTROSCOPY
Optional Information
- Contract/Grant/Project number
- Contract AC02-76CH00016; Grant DMR 9258544
- Funding organization
- USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States).
- Secondary number(s)
- CONF-931108--46.