Published January 1, 2010 | Version v1
Journal article

Universal conductance for the Anderson model

  • 1. Departamento de Fisica e Informatica, Instituto de Fisica de Sao Carlos, Universidade de Sao Paulo, 369, Sao Carlos, SP (Brazil)
  • 2. Departamento de Fisica, Instituto de Geociencias e Ciencias Exatas, Universidade Estadual Paulista, 13500, Rio Claro, SP (Brazil)

Description

We discuss the thermal dependence of the zero-bias electrical conductance for a quantum dot embedded in a quantum wire, or side-coupled to it. In the Kondo regime, the temperature-dependent conductances map linearly onto the conductance for the symmetric Anderson Hamiltonian. The mapping fits accurately numerical renormalization-group results for the conductance in each geometry. In the side-coupled geometry, the conductance is markedly affected by a gate potential applied to the wire; in the embedded geometry, it is not.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/200/5/052020

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
200
Journal Issue
5
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
international conference on magnetism
Acronym
ICM 2009
Dates
26-31 Jul 2009
Place
Karlsruhe (Germany)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42041630
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
APPROXIMATIONS; ELECTRIC CONDUCTIVITY; HAMILTONIANS; QUANTUM DOTS; QUANTUM WIRES; RENORMALIZATION; SYMMETRY; TEMPERATURE DEPENDENCE
Descriptors DEC
CALCULATION METHODS; ELECTRICAL PROPERTIES; MATHEMATICAL OPERATORS; NANOSTRUCTURES; PHYSICAL PROPERTIES; QUANTUM OPERATORS