Published January 1, 2010
| Version v1
Journal article
Universal conductance for the Anderson model
Creators
- 1. Departamento de Fisica e Informatica, Instituto de Fisica de Sao Carlos, Universidade de Sao Paulo, 369, Sao Carlos, SP (Brazil)
- 2. Departamento de Fisica, Instituto de Geociencias e Ciencias Exatas, Universidade Estadual Paulista, 13500, Rio Claro, SP (Brazil)
Description
We discuss the thermal dependence of the zero-bias electrical conductance for a quantum dot embedded in a quantum wire, or side-coupled to it. In the Kondo regime, the temperature-dependent conductances map linearly onto the conductance for the symmetric Anderson Hamiltonian. The mapping fits accurately numerical renormalization-group results for the conductance in each geometry. In the side-coupled geometry, the conductance is markedly affected by a gate potential applied to the wire; in the embedded geometry, it is not.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/200/5/052020Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 200
- Journal Issue
- 5
- Journal Page Range
- [4 p.]
- ISSN
- 1742-6596
Conference
- Title
- international conference on magnetism
- Acronym
- ICM 2009
- Dates
- 26-31 Jul 2009
- Place
- Karlsruhe (Germany)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42041630
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- APPROXIMATIONS; ELECTRIC CONDUCTIVITY; HAMILTONIANS; QUANTUM DOTS; QUANTUM WIRES; RENORMALIZATION; SYMMETRY; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CALCULATION METHODS; ELECTRICAL PROPERTIES; MATHEMATICAL OPERATORS; NANOSTRUCTURES; PHYSICAL PROPERTIES; QUANTUM OPERATORS