Published December 17, 2012
| Version v1
Journal article
Temperature dependence of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two-dimensional electron system
- 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China)
Description
Structure inversion asymmetry (SIA) related circular photogalvanic effect (CPGE) has been investigated under near-infrared radiation at temperatures ranging from 80 K to 290 K in GaAs/Al0.3Ga0.7As heterostructures. The result shows nonmonotonic changes of CPGE with temperature variation; obviously larger signal at low temperature and sign inversions in the temperature range between 140 K and 170 K are observed. We suggest this result is not only related to the photoconductivity and Rashba spin splitting, but other factors superpose on them.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/400/4/042041Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 400
- Journal Issue
- 4
- Journal Page Range
- [4 p.]
- ISSN
- 1742-6596
Conference
- Title
- 26. international conference on low temperature physics
- Acronym
- LT26
- Dates
- 10-17 Aug 2011
- Place
- Beijing (China)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44040251
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM ARSENIDES; ASYMMETRY; ELECTRONS; GALLIUM ARSENIDES; HETEROJUNCTIONS; NEAR INFRARED RADIATION; PHOTOCONDUCTIVITY; SPIN; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL CALCULATIONS; VARIATIONS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ANGULAR MOMENTUM; ARSENIC COMPOUNDS; ARSENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; INFRARED RADIATION; LEPTONS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SEMICONDUCTOR JUNCTIONS