Published December 17, 2012 | Version v1
Journal article

Temperature dependence of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two-dimensional electron system

  • 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China)

Description

Structure inversion asymmetry (SIA) related circular photogalvanic effect (CPGE) has been investigated under near-infrared radiation at temperatures ranging from 80 K to 290 K in GaAs/Al0.3Ga0.7As heterostructures. The result shows nonmonotonic changes of CPGE with temperature variation; obviously larger signal at low temperature and sign inversions in the temperature range between 140 K and 170 K are observed. We suggest this result is not only related to the photoconductivity and Rashba spin splitting, but other factors superpose on them.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/400/4/042041

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
400
Journal Issue
4
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
26. international conference on low temperature physics
Acronym
LT26
Dates
10-17 Aug 2011
Place
Beijing (China)