Published October 2008 | Version v1
Journal article

Non-impact deposition for electrostatic micromanipulation of a conductive particle by a single probe

  • 1. Department of Mechanical and Aerospace Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

Description

This note reports on an experimental demonstration of non-impact deposition for electrostatic micromanipulation of a conductive particle by a single probe. The experimental system consists of a probe, a 30-micrometers-in-diameter particle, and a substrate plate. The particle, initially adhering to the probe tip, is detached and deposited onto the substrate by rapid change of the probe–substrate voltage designed on the basis of calculation by a boundary element method. The feasibility is experimentally shown; furthermore, the method of modifying the voltage sequence to improve the rate of success by considering the finite slew rate of the power source is discussed. A correction was made to this article (in the introduction) on 18 September 2008. The corrected electronic version is identical to the print version. (note)

Availability note (English)

Available from http://dx.doi.org/10.1088/0960-1317/18/10/107001

Additional details

Identifiers

DOI
10.1088/0960-1317/18/10/107001;
PII
S0960-1317(08)84717-1;

Publishing Information

Journal Title
Journal of Micromechanics and Microengineering. Structures, Devices and Systems
Journal Volume
18
Journal Issue
10
Journal Page Range
[3 p.]
ISSN
0960-1317
CODEN
JMMIEZ

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44095689
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BOUNDARY ELEMENT METHOD; DEPOSITION; DESIGN; ELECTRIC POTENTIAL; PARTICLES; PROBES; SUBSTRATES; THREE-DIMENSIONAL CALCULATIONS
Descriptors DEC
CALCULATION METHODS; FINITE ELEMENT METHOD; MATHEMATICAL SOLUTIONS; NUMERICAL SOLUTION