Published November 1986 | Version v1
Journal article Metadata-only

4.2 K-photoluminescence study of the annealing process in neutron-irradiated silicon

Creators

  • 1. VEB Spurenmetalle Freiberg (German Democratic Republic)

Description

Described are experimental results of impurity characterisation and defect kinetic studies aimed at investigating annealing processes in neutron-irradiated silicon. In addition to Hall effect and resistivity measurements, low-temperature luminescence spectroscopy has been made use of for the physical characterisation, making it possible to determine shallow impurities and observe their kinetic during annealing, especially with respect to phosphorus activation, along with the changes in the electrical properties. (author)

Additional details

Publishing Information

Journal Title
Cryst. Res. Technol.
Journal Volume
21
Journal Issue
11
Series
Cryst. Res. Technol.
Journal Page Range
1475-1486
ISSN
0232-1300
CODEN
CRTED

INIS

Country of Publication
Germany
Country of Input or Organization
German Democratic Republic
INIS RN
18035556
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; CRYSTAL DOPING; ELECTRIC CONDUCTIVITY; HALL EFFECT; IMPURITIES; NEUTRONS; PHOSPHORUS 31; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; SILICON; TRANSMUTATION; ULTRALOW TEMPERATURE
Descriptors DEC
BARYONS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ELEMENTS; EMISSION; FERMIONS; HADRONS; HEAT TREATMENTS; ISOTOPES; LIGHT NUCLEI; LUMINESCENCE; NUCLEI; NUCLEONS; ODD-EVEN NUCLEI; PHOSPHORUS ISOTOPES; PHOTON EMISSION; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMIMETALS; STABLE ISOTOPES