Published July 15, 1989
| Version v1
Journal article
Deposition of optical thin films by pulsed laser assisted evaporation
Creators
- 1. Rockwell International Science Center, P.O. Box 1085, Thousand Oaks, California 91360 (USA)
Description
Thin films of several refractory metal oxides and Ge were deposited by pulsed laser evaporation using a TEA CO2 laser. Films deposited on ambient temperature substrates had a polycrystalline microstructure. Ge films deposited on 3000C substrates were single crystalline. The refractive indices of these films were higher than indices of films deposited by conventional evaporation techniques and were bulk values for HfO2 and ZrO2. The crystalline microstructure and high packing density of the films were attributed to the effect of energetic ions in the laser-induced plasma
Additional details
Publishing Information
- Journal Title
- Applied Optics
- Journal Volume
- 28
- Journal Issue
- 14
- Series
- Appl. Opt.
- Journal Page Range
- 2806-2808
- ISSN
- 0003-6935
- CODEN
- APOPA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20083871
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CERIUM OXIDES; COATINGS; DENSITY; DEPOSITION; EVAPORATION; FILMS; GERMANIUM; HAFNIUM OXIDES; LASER RADIATION; LASER TARGETS; MICROSTRUCTURE; MORPHOLOGICAL CHANGES; OPTICAL PROPERTIES; TANTALUM OXIDES; TITANIUM OXIDES; ZIRCONIUM OXIDES
- Descriptors DEC
- CERIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; HAFNIUM COMPOUNDS; METALS; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; RADIATIONS; RARE EARTH COMPOUNDS; TANTALUM COMPOUNDS; TARGETS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS