Published January 1, 2001
| Version v1
Journal article
Clusters and Planar Defects in Boron Implanted Silicon: an X-ray Diffuse Scattering Study
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Materials Research Society Symposia Proceedings
- Journal Issue
- 1Jan2001issue
- Journal Page Range
- [10 p.]
- ISSN
- 0272-9172
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 34009085
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DEFECTS; ION IMPLANTATION; SCATTERING; SILICON; X RADIATION
- Descriptors DEC
- ALLOYS; BORON ALLOYS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; RADIATIONS; SEMIMETALS
Optional Information
- Contract/Grant/Project number
- AC03-76SF00515
- Funding organization
- USDOE Office of Science (United States)
- Secondary number(s)
- SLAC-REPRINT--2001-183