Published December 2007 | Version v1
Journal article Metadata-only

Spin polarization of a non-magnetic high g-factor semiconductor at low magnetic field

Creators

  • 1. Department of Physics, Korea University, Chochiwon 339-700 (Korea, Republic of)
  • 2. Nano Devices Research Center, Korea Institute of Science and Technology, Seoul 130-650 (Korea, Republic of)
  • 3. Department of Physics, Inha University, Incheon 402-751 (Korea, Republic of)
  • 4. Department of Physics and APCTP, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)

Description

We have studied the spin polarization of HgCdTe by measuring Shubnikov-de Haas oscillations. The magnetic field have been applied in parallel and perpendicular to the current. Relatively long spin relaxation time was observed since only spin conserved transition is allowed by selection rules. The electronic spin is completely polarized when the applied magnetic field is larger than 0.5 Tesla, which can be easily generated by micromagnets deposited on the surface of the specimen. Thus, the spin-manipulation such as spin up/down junction can be realized with this semiconductor. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssb.200777129

Additional details

Identifiers

DOI
10.1002/pssb.200777129;

Publishing Information

Journal Title
Physica Status Solidi. B, Basic Research
Journal Volume
244
Journal Issue
12
Journal Page Range
p. 4538-4541
ISSN
0370-1972
CODEN
PSSBBD

Conference

Title
International symposium on advanced magnetic materials and applications (ISAMMA 2007)
Dates
28 May - 1 Jun 2007
Place
Jeju (Korea, Republic of)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
39024032
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CADMIUM TELLURIDES; ELECTRONIC STRUCTURE; MAGNETIC FIELDS; MAGNETORESISTANCE; MERCURY TELLURIDES; RELAXATION TIME; SELECTION RULES; SEMICONDUCTOR MATERIALS; SHUBNIKOV-DE HAAS EFFECT; SPIN ORIENTATION
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; MATERIALS; MERCURY COMPOUNDS; ORIENTATION; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS

Optional Information

Notes
With 3 figs., 10 refs.. SICI: 0370-1972(200712)244:12<4538::AID-PSSB200777129>3.0.TX;2-D