Industrial challenges in ion beam processing and metrology in the 3D era

Ion beam mechanisms present in plasma doping have been investigated by comparing SIMS measurements of Ge implants into deposited layers of As on Si wafers to planar dynamic ion beam models of the implants and SIMS analyses. Industrial devices are overcoming the limitations of lateral scaling by using the vertical direction. The same modelling approach would be valuable for interpreting 1.5D SIMS analyses of plasma doping of 3D-NAND test structures but 3D dynamic codes do not yet have all the capabilities to allow this. The required features are being developed within a static 3D code, TRI3DSTP, which has been used to qualitatively explain the good uniformity of a P plasma doping process and indicate where more quantitative explanations will be possible once the full dynamic capabilities are available.