Modification of surface layers of CdS single crystals by implantation of gallium ions large doses

The results are presented of the investigation of influence of the ion implantation by large doses of gallium (D=1015 and 1016 cm-2) on the surface properties of CdS single crystals. It is shown that a new semiconductor CdGa2S4 is formed on the (1120) surface of CdS single crystals by such ion implantation. The analysis of the proto-, cathodoluminescence and reflection spectra and electron diffraction patterns of the ion-doped layers is given