Published August 1986 | Version v1
Journal article Metadata-only

Study of tungsten silicide formed by As ion implantation

Creators

  • 1. Beijing Normal Univ. (China). Inst. of Low Energy Nuclear Physics

Description

Tungsten silicide was formed by ion beam mixing at different temperatures and its crystallographic structure was investigated. The comparison was made between the silicides of directly sintering and of ion-beam-induced. It was found that the temperature of forming tungsten silicide was decreased by ion beam mixing. A ''three-step'' model was given in an attempt to explain the mechanism of forming silicide induced by ion beam

Additional details

Publishing Information

Journal Title
Nucl. Tech.
Journal Issue
no.8
Series
Nucl. Tech.
ISSN
0253-3219
CODEN
NUTED

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
19010177
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; ARSENIC IONS; CRYSTAL GROWTH; ION BEAMS; ION IMPLANTATION; MIXING; SILICON; SINTERING; TEMPERATURE DEPENDENCE; TUNGSTEN; TUNGSTEN SILICIDES
Descriptors DEC
ATOMIC IONS; BEAMS; CHARGED PARTICLES; ELEMENTS; FABRICATION; HEAT TREATMENTS; IONS; METALS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TUNGSTEN COMPOUNDS