Studies of lattice damage caused by 1 MeV Si+ implantation into Al0.3Ga0.7As superlattices and GaAs at elevated substrate temperature
Description
Rutherford backscattering/channeling technique has been used to investigate the lattice damage caused by 1 MeV Si+ implantation into Al0.3Ga0.7As/GaAs superlattices and GaAs at elevated substrate temperature and room temperature for different doses. For elevated substrate temperature irradiation, a dose range for balance between defect production and dynamic annealing, and a critical dose for unbalance between them are observed for both Al0.3Ga0.7As/GaAs superlattices and GaAs. The superlattices are more difficult to be damaged than GaAs, and the critical dose for the former is also larger than that for the latter. The hot spot and knock-on model is used to interpret the temperature and dose dependence of damage accumulation in the two materials. The relative bond strength in GaAs and AlxGa1-xAs are calculated using CNDO/2 quantum chemistry method to explain the differences of damage accumulation in Al0.3Ga0.7As/ GaAs superlattices and GaAs
Additional details
Publishing Information
- Journal Title
- Acta Physica Sinica
- Journal Volume
- 43
- Journal Issue
- 8
- Journal Page Range
- p. 1311-1317.
- ISSN
- 1000-3290
- CODEN
- WLHPAR
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 26051773
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ARSENIDES; CHANNELING; CRYSTAL LATTICES; DOSE-RESPONSE RELATIONSHIPS; GALLIUM ARSENIDES; ION IMPLANTATION; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; RUTHERFORD SCATTERING; SILICON IONS; SUBSTRATES; SUPERLATTICES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELASTIC SCATTERING; ENERGY RANGE; GALLIUM COMPOUNDS; IONS; MEV RANGE; PNICTIDES; RADIATION EFFECTS; SCATTERING