Published 2001 | Version v1
Journal article Metadata-only

Formation of vacancy clusters during copper diffusion in semi-insulating GaAs

Creators

  • 1. Halle-Wittenberg Univ., Halle (Germany). Fachbereich Physik

Description

Undoped GaAs was enriched with copper and studied by means of positron annihilation after quenching. Vacancies and small vacancy clusters (τdef>350 ps) were registered by positron lifetime spectroscopy if Cu diffuses out during annealing. Doppler coincidence spectroscopy reveals that the vacancies and the vacancy clusters are decorated with copper atoms. Number and size of these microvoids depend on the initial copper concentration. (orig.)

Additional details

Publishing Information

Journal Title
Materials Science Forum
Journal Volume
363-365
Journal Page Range
p. 111-113
ISSN
0255-5476
CODEN
MSFOEP

Conference

Title
12. international conference on positron annihilation
Acronym
ICPA-12
Dates
6-12 Aug 2000
Place
Munich (Germany)

INIS

Country of Publication
Switzerland
Country of Input or Organization
Switzerland
INIS RN
32031070
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AGGLOMERATION; ANNEALING; ANNIHILATION; COINCIDENCE METHODS; COPPER ADDITIONS; DOPPLER BROADENING; GALLIUM ARSENIDES; LIFETIME; MICROSTRUCTURE; POSITRONS; QUENCHING; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; THERMAL DIFFUSION; VACANCIES; VOIDS
Descriptors DEC
ALLOYS; ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; ARSENIC COMPOUNDS; ARSENIDES; COPPER ALLOYS; COUNTING TECHNIQUES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFUSION; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; HEAT TREATMENTS; INTERACTIONS; LEPTONS; LINE BROADENING; MATERIALS; MATTER; PARTICLE INTERACTIONS; PNICTIDES; POINT DEFECTS; TEMPERATURE RANGE; TRANSITION ELEMENT ALLOYS

Optional Information

Notes
10 refs.